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Comparison of Simple Approximations and Numerical Solutions for the Threshold Voltage of Ion-Implanted Long-Channel MOSFET's

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3 Author(s)

The very simple approximations used for calculating the threshold voltage shifts for ion-implanted long-channel MOSFET's in classroom discussions are compared to the results of a more exact numerical simulation. Limited experimental measurements are compared to the calculated threshold voltage shifts.

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Education, IEEE Transactions on  (Volume:27 ,  Issue: 1 )