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A Haynes-Shockley experiment is described which is performed on silicon planar structures instead of on the usual germanium filaments. The drift field is realized by planar ohmic contacts, which are properly positioned to ensure a homogeneous field in the measuring area. The structures have been thoroughly tested, and the measurements yield the expected minority carrier drift mobility and lifetime. The silicon structures relieve the student of the laborious preparation of the normally used germanium filaments.