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"Ramp Differentiation" C(V) Measurement of MOS Structures for Thermally Grown Oxide Quality Analysis

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2 Author(s)

A new simplified and economical technique, suitable for instructional use, to obtain experimental C(V) plots for MOS structures is described. Comparison of theoretical and experimental C(V) characteristics allows determining the number of excess charges in the thermally grown oxide, serving as an economical quality gauge for the oxide-growing process.

Published in:

IEEE Transactions on Education  (Volume:14 ,  Issue: 2 )