The degradation behavior of 2-mum wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.
Published in:
Electron Devices, IEEE Transactions on
(Volume:54
,
Issue:
10
)
Date of Publication: Oct. 2007