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High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With F_{T} \gg \hbox {420} \hbox {GHz}

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4 Author(s)
Honggang Liu ; Swiss Federal Inst. of Technol. (ETH Zurich), Zurich ; Ostinelli, O. ; Yuping Zeng ; Bolognesi, C.R.

Type-II n-p-n InP/GaAsSb/InP double heterostructure bipolar transistors (DHBTs) that are fabricated by optical lithography with a 0.6 times 5 mum2 emitter on a 20-nm compositionally uniform GaAsSbxSb1-x, carbon-doped base with x = 0.60 and a 75-nm InP collector show current-gain cutoff frequencies as high as 423 GHz at 10 mA/mum2 and feature a BVCEO = 4 V. The pseudomorphic As-rich InP/GaAsSb DHBTs feature a high maximum dc current gain of > 160, owing to the reduction of the type-II conduction band discontinuity DeltaEC and the associated recombination at the InP/GaAsSb emitter-base interface. This brief demonstrates that the InP/GaAsSb DHBT technology can combine high gain, wide bandwidths, high-current drivability, and structural simplicity.

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Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 10 )