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Notice of Violation of IEEE Publication Principles
"A 3.3 V 12.5 Gb s 0.2 μm SiGe BiCMOS Laser Diode Driver Using Bias Current Modulation Cancellation"
by Maxim, A.
in the IEEE Journal of Solid-State Circuits,
Volume 42, Issue 10, Oct. 2007 Page(s):2086 - 2098
After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles
Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici, D. Smith, S. Dupue
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A low supply voltage fully-integrated 12.5 Gb/s laser diode driver IC was realized in a 0.2 mum 60 GHz fT SiGe BiCMOS process. A three-fold power consumption reduction versus existing drivers was achieved by using a 3.3 V supply and a dynamic emitter follower having a local positive feedback loop that boosts the drive strength of the leg that controls the turning-off output switch, without taking additional supply power. Low voltage operation was achieved by replacing the tail current source of the output switch with a resistor and setting the current value with a common-mode feedback loop. A direct on-chip summation of - ias and modulation currents was realized by using a bias modulation canceling circuit and a cascode current generator with series damping resistor. The signal path peaking and ringing was reduced with RC compensation networks that critically damp both the last emitter follower which drives a large load capacitance and the output switch parasitic LC circuit. A virtually constant dynamic performance was achieved for a wide range of modulation currents by using adjustable voltage swings and tail currents in the driver back-end stages. Laser diode driver IC specifications include: 3-3.6 V supply voltage, <70 mA supply current (excluding output current), 20-100 mA modulation current range, 1-100 mA bias current range, <12 pspp deterministic jitter, <25 ps rise/fall time, 10% to 90% pulse width adjustment and 1.5 X 1.5 mm2 die area.