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High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric

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7 Author(s)

In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiOx) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.

Published in:

IEEE Electron Device Letters  (Volume:28 ,  Issue: 10 )