Cart (Loading....) | Create Account
Close category search window
 

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Rustagi, S.C. ; Inst. of Microelectron., Singapore ; Singh, N. ; Lim, Y.F. ; Zhang, G.
more authors

Gate-all-around n-MOSFETs with Si-nanowire (~7 nm) as the channel body are fabricated and characterized for their low-temperature behavior (~5 K to 295 K). IDS-VGS characteristics at low VDS (~50 mV) exhibit a decrease in current with decreasing temperature in strong inversion up to about ~200 K. However, at high VDS, drain current reverts to typical temperature behavior, i.e., IDS increases with the reducing temperature due to the increase in phonon-limited mobility (muph)- It is inferred that, at low VDS the enhancement in muph at a reduced temperature could be possibly masked by the intersubband scattering on account of subband splitting due to quantum-confinement effects as indicated by subband calculations for nanowire structures.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 10 )

Date of Publication:

Oct. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.