Referenced Items are not available for this document.
This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
10
)
Date of Publication: Oct. 2007
- Page(s):
- 862 - 864
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9633344
- Digital Object Identifier :
- 10.1109/LED.2007.904210
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 24 September 2007
- Issue Date :
- Oct. 2007
- Sponsored by :
- IEEE Electron Devices Society
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