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NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

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7 Author(s)
Chen, J.H. ; Nat. Univ. of Singapore, Singapore ; Wang, X.P. ; Ming-Fu Li ; Lee, S.J.
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This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 10 )