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Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 μm

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8 Author(s)
Mehta, M. ; Univ. of New Mexico, Albuquerque ; Jallipalli, A. ; Tatebayashi, J. ; Kutty, M.N.
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Buffer-free growth of GaSb on GaAs using interfacial misfit (IMF) layers may significantly improve the performance of antimonide-based emitters operating between 1.6 and 3 mum by integrating III-As and III-Sb materials. Using the IMF, we are able to demonstrate a GaSb-AlGaSb quantum-well laser grown on a GaAs substrate and emitting at 1.65 mum, the longest known operating wavelength for this type of device. The device operates in the pulsed mode at room temperature and shows 15-mW peak power at -10degC and shows high characteristic temperature (To) for an Sb-based active region. Further improvements to IMF formation can lead to high-performance lasers operating up to 3 mum.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 20 )