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Screen/stencil-printable nanosilver pastes were processed and characterized for die-attaching SiC devices. The nanosilver pastes were made by mixing silver particles in diameter with an organic binder vehicle. For the die-attachment, the nanosilver pastes were printed onto silver-coated or gold-coated direct-bond-copper (DBC) substrates. After die-attaching the SiC devices, the assemblies were heated to 300 with a 40-min dwell time to develop bonding up to 40 MPa on the silver-coated substrates, which was comparable to that of the Pb37Sn63 solder die-attachment. Scanning acoustic microscopy (SAM) of the sintered silver die-attachment did not reveal any detectable voids, while scanning electron microscopy (SEM) showed the presence of uniformly distributed microscale pores. Because of the porous microstructure of the sintered silver and its low apparent elastic modulus, it could help relieve thermomechanical stresses in the die-attachment assembly. Finally, since silver die-attachment is almost pure in constituent (>99%), the die-attachment could enable packaging of wide bandgap semiconductors devices, such as SiC or GaN, for high-temperature operation.