We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bai, John G. ; Dept. of Mech. Eng., Univ. of Washington, Seattle, WA ; Calata, J.N. ; Guo-Quan Lu

Screen/stencil-printable nanosilver pastes were processed and characterized for die-attaching SiC devices. The nanosilver pastes were made by mixing silver particles in diameter with an organic binder vehicle. For the die-attachment, the nanosilver pastes were printed onto silver-coated or gold-coated direct-bond-copper (DBC) substrates. After die-attaching the SiC devices, the assemblies were heated to 300 with a 40-min dwell time to develop bonding up to 40 MPa on the silver-coated substrates, which was comparable to that of the Pb37Sn63 solder die-attachment. Scanning acoustic microscopy (SAM) of the sintered silver die-attachment did not reveal any detectable voids, while scanning electron microscopy (SEM) showed the presence of uniformly distributed microscale pores. Because of the porous microstructure of the sintered silver and its low apparent elastic modulus, it could help relieve thermomechanical stresses in the die-attachment assembly. Finally, since silver die-attachment is almost pure in constituent (>99%), the die-attachment could enable packaging of wide bandgap semiconductors devices, such as SiC or GaN, for high-temperature operation.

Published in:

Electronics Packaging Manufacturing, IEEE Transactions on  (Volume:30 ,  Issue: 4 )