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Secondary emission detector (SED) is improved for ion temperature measurement of high-temperature plasma by charge-exchange neutral analysis. This improvement is based on the incident energy (E) dependency of the ratio of secondary electron yield for an incident angle Â¿ to that for normal incidence, defined as k(Â¿, E). The ratio k(Â¿, E) is investigated as functions of E and Â¿ for hydrogen atom incidence. To examine and demonstrate the usefulness of the improved SED, both experimental simulation and computer simulation of the charge-exchange neutral analysis with the improved SED are used. In the experimental simulation, facsimile neutrals are produced by neutralization of an ion beam on a solid surface and are analyzed by the improved SED. The result is compared with that obtained by using normal charge-stripping type analyzer. In the computer simulation, a simple model of the charge-exchange neutral emission of high-temperature hydrogen plasma is assumed and the usefulness of the improved SED as a hydrogen plasma diagnostic technique is evaluated under the influences of strong plasma radiation conditions.