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Calculations have been performed to estimate the number of atoms displaced from normal sites by Compton Electrons from Co60 gamma rays and by slow and fast neutrons. The resultant change in carrier lifetimes and mobilities are used to predict the performance of a silicon solar cell under gamma and neutron irradiation. The effect of annealing of defects is considered, and from these computations an estimate is made to show the minimum flux necessary to produce noticeable damage. Data are presented showing the effects of Co60 gamma rays on 10 silicon solar cells and comparison is made with the theory.