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Transient Radiation Effects in Transistors

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1 Author(s)
E. A. Carr ; Hughes Aircraft Company Ground Systems Group Fullerton, California

The measurement, analysis and theory of primary photocurrent in transistors are discussed. Techniques for calculating or predicting primary photocurrent from pre-irradiation measurements are developed. For transistors driven into saturation by high-intensity pulses of gamma radiation, a radiation storage time is defined. A method for predicting radiation storage time entirely from non-radiation parameters is developed.

Published in:

IEEE Transactions on Nuclear Science  (Volume:11 ,  Issue: 5 )