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This paper describes a novel technique, based on the use of a microwave bridge, for the determination of very small changes in the phase and attenuation constants of semiconductor materials. Using this technique, the photoelectric and photodielectric effects in a semiconductor sample under external illumination can be determined. The room-temperature photodielectric effect Â¿Â¿Â¿r and the photoelectric effect Â¿Â¿Â¿r of silicon and germanium single-crystal samples were measured in the X-band region in the presence of monochromatic illumination in the range from 0.8 to 2.0 , Â¿m. It was found that the variations of Â¿Â¿Â¿r and Â¿Â¿Â¿r with respect to the wavelength of the illumination were similar, with a maximum response at about 1.05 Â¿m for silicon and at 1.75 Â¿m for germanium.