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Water-related degradation of contacts in the multilevel MOS IC with spin-on glasses as interlevel dielectrics

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3 Author(s)
Lifshitz, N. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Lai, W.Y.C. ; Smolinsky, G.

The effect of using silicon-dioxide-based spin-on glasses as interlevel dielectrics in multilevel silicon integrated circuits is discussed. It was found that water in the spin-on glass leads to an open-circuit failure of contacts in small windows due to the outgassing of water during aluminum deposition. Although a 450 degrees C anneal can markedly improve the quality of the contacts, the process remains unreliable for manufacturing.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 12 )

Date of Publication:

Dec. 1989

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