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A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

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9 Author(s)
Huang, J.C. ; Raytheon Res. Div., Lexington, MA, USA ; Zaitlin, M. ; Hoke, W. ; Adlerstein, M.
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A 1/2- mu m gate-length pulse-doped pseudomorphic high-electron-mobility transistor (HEMT) grown by MBE, which exhibits a current-gain cutoff frequency of 62 GHz, is discussed. The maximum available gain cutoff frequency was greater than 150 GHz. A minimum noise figure of 0.85 dB and associated gain of 14 dB were measured at 10 GHz. Tuned small-signal gain in a waveguide-to-microstrip test fixture at 44 GHz was 7.6 dB. When the HEMT was tuned for power, 260 mW/mm with 5-dB gain and 17% power-added efficiency were obtained at 44 GHz. These results suggest that a 1/2- mu m pseudomorphic HEMT is a viable candidate for Q-band applications.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 11 )