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A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

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4 Author(s)
Nittono, Takumi ; NTT LSI Lab., Kanagawa, Japan ; Nagata, K. ; Nakajima, O. ; Ishibashi, T.

A self-alignment technique for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) using refractory metal film, W, as the emitter and base electrodes is presented. A nonalloyed contact formation combined with selective reactive ion etching of W or WSi/sub x/ against GaAs and SiO/sub 2/ produces a self-aligned structure. An emitter contact that is thermally stable is obtained by using a Zn diffusion process to make the extrinsic base contact layer. An f/sub T/ value as high as 82 GHz was obtained. The self-alignment technique combined with the Zn diffusion process will achieve a much higher f/sub T/ if a thinner base HBT structure is used.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 11 )

Date of Publication:

Nov. 1989

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