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A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

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7 Author(s)

The 94-GHz power performance of a 0.25*75- mu m doped-channel pseudomorphic heterostructure FET (HFET) is reported. A maximum output power of 32 mW, corresponding to a power density of 0.43 W/mm, was obtained with 15% power-added efficiency and 3.0 dB gain.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 10 )