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Complementary single- and split-post dielectric- resonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10-5 to 105 Omega ldr cm. Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.