By Topic

Low Noise Amplifier Design Using 0.35 μm SiGe BiCMOS Technology for WLAN/WiMax Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kaynak, M. ; Sabanci Univ., Istanbul ; Tekin, I. ; Bozkurt, A. ; Gurbuz, Y.

This paper presents a design methodology of a low noise and low power fully-integrated LNA, targeted to all the three bands of IEEE 802.11a WLAN applications in the 5-6 GHz band and using 0.35 μm SiGc BiCMOS HBT technology. We emphasized in this paper the importance extraction of parasitic components through the use of electromagnetic simulations, which is usually ignored in the literature of similar works/research when reporting noise figure. Finally, we have obtained a SiGe HBT on-chip matched LNA, exhibiting NF of 2.75 dB, gain of ≫15 dB, input return loss of ≪ -15 dB, output return loss of ≪ -10 dB. The circuit consumes only 10.6 mVV under 3.3V supply voltage. The circuit die area is 595 x 925 μm2, including pads.

Published in:

Systems, Applications and Technology Conference, 2006. LISAT 2006. IEEE Long Island

Date of Conference:

5-5 May 2006