Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Selective Filling and Sintering of Copper Nanoclusters for Interconnect

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

In copper interconnect technology, dielectric trenches are patterned, filled with copper, and polished. We report a cluster-based deposition technology that provides efficient trench filling and excellent selectivity between trenches and plateaus on damascene structures. The selectivity arises due to the propensity for reflection of clusters from the planar surfaces between trenches. Trenches of sub-200 nm widths, with various diffusion barriers and seed layers, and up to 5:1 aspect ratios have been completely filled with copper clusters. We also show that copper clusters can be sintered into a seed layer using hydrogen annealing. Thus, dense copper films within trenches are obtained. Preliminary results from planar samples show that the resistivity is around 2.3 times 10-8 Omegam.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 5 )