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Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides

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4 Author(s)
Brouckaert, J. ; Ghent Univ.-Interuniv. Microelectron. Center (IMEC), Ghent ; Roelkens, G. ; Van Thourhout, D. ; Baets, R.

We present measurement results of compact and efficient InAlAs-InGaAs metal-semiconductor-metal photodetectors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI substrate by means of low-temperature die-to-wafer bonding using divinyldisiloxane benzocyclobutene (DVS-BCB). The responsivity of a 30-mum-long detector is 1.0 A/W at a wavelength of 1550 nm and the dark current is 4.5 nA at a bias voltage of 5 V.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 19 )