By Topic

MEMS-Based Probe Array for Wafer Level LSI Testing Transferred onto Low CTE LTCC Substrate by Au/Sn Eutectic Bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
S-H. Choe ; Department of Nanomechanics, Graduate School of Engineering, Tohoku University Sendai, Miyagi, 980-8579 JAPAN. Tel: +81-22-795-6936; E-mail: ; S. Tanaka ; M. Esashi

This paper describes the fabrication technology of a new MEMS-based probe card. The probe card is designed to satisfy requirements from advanced wafer-level, burn-in LSI tests. The problem of thermal expansion mismatch between the probe card and LSI wafers is solved by using a LTCC (low temperature cofired ceramics) substrate with a coefficient of thermal expansion of 3.4 ppm/degC. The probes are first formed on a silicon wafer, and then transferred to the LTCC substrate using Au/Sn solder bumps. The prototyped probe card was preliminarily evaluated in contact resistance. The measured contact resistance was 0.14 Omega during 2500 touchdowns.

Published in:

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

Date of Conference:

10-14 June 2007