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Quality Factors and Energy Losses of Single-Crystal Silicon Nanowire Electromechanical Resonators

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4 Author(s)
X. L. Feng ; Kavli Nanoscience Institute, California Institute of Technology, Mail Code 114-36, Pasadena, CA 91125, USA. E-mail: ; R. R. He ; P. D. Yang ; M. L. Roukes

We report measurements on quality factors (Q's) of single-crystal silicon nanowire (SiNW) resonators operating in the very-high frequency (VHF) range. Q's of ~200 MHz metalized SiNWs are considerably lower than those of the pristine SiNWs operating at similar frequencies. The observed damping effect due to resonance transduction agrees well with the loaded-Q model for magnetomotive scheme. The temperature dependency of dissipation (Q-1 ) is found to be approximately from Q-1 prop T0.3 to Q-1 prop T0.4. Clamping losses are becoming important for such VHF ultrasmall resonators.

Published in:

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

Date of Conference:

10-14 June 2007