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Quality Factors and Energy Losses of Single-Crystal Silicon Nanowire Electromechanical Resonators

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4 Author(s)
Feng, X.L. ; California Inst. of Technol., Pasadena ; He, R.R. ; Yang, P.D. ; Roukes, M.L.

We report measurements on quality factors (Q's) of single-crystal silicon nanowire (SiNW) resonators operating in the very-high frequency (VHF) range. Q's of ~200 MHz metalized SiNWs are considerably lower than those of the pristine SiNWs operating at similar frequencies. The observed damping effect due to resonance transduction agrees well with the loaded-Q model for magnetomotive scheme. The temperature dependency of dissipation (Q-1 ) is found to be approximately from Q-1 prop T0.3 to Q-1 prop T0.4. Clamping losses are becoming important for such VHF ultrasmall resonators.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Date of Conference:

10-14 June 2007