By Topic

Sub-μg Ultra-Low-Noise MEMS Accelerometers Based on CMOS-Compatible Piezoelectric AlN Thin Films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
F. Gerfers ; Intel Research, Intel Corporation, Santa Clara, California, US. Tel: +1-650-210-6053; E-mail: Friedel.Gerfers@ieee.org ; M. Kohlstadt ; H. Bar ; M. -Y. He
more authors

Piezoelectric accelerometers based on aluminum nitride thin films offer a number of advantages in microelectromechanical systems such as high signal-to-noise ratio, low dielectric loss, low power requirements and CMOS process compatibility. This paper reports the state-of-the-art piezoelectric accelerometer design with an emphasis on maximizing the sensitivity per area. The accelerometers have a novel sensing structure to increase the sensitivity without increasing the sensing area using the approach of stress concentrations. Furthermore, the sensing structure is designed to have low off-axis sensitivity and to be reliable with symmetric balanced bars between sensing beams. Experimental results confirm the significantly improved sensitivity of the accelerometers obtained with the new sensing structures. The tested charge sensitivity is 5.2pC/g and the measured total noise floor of sensor plus interface electronics is as low as 670ng/√Hz.

Published in:

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

Date of Conference:

10-14 June 2007