Cart (Loading....) | Create Account
Close category search window

Tensile Testing of Single Crystal Silicon Thin Films at 800°C using IR Heating

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

This paper reports on the development of a new tensile tester operable at 800degC using IR heating system for evaluating mechanical properties of thin films at high temperature. Single crystal silicon films of 3 mum thick were tested at 600degC. At room temperature, the fracture strength and Young's modulus were 3.33 GPa and 163.2 GPa, respectively. At 600degC, they were 2.71 GPa and 151.8 GPa, respectively. When the strain rate was decreased, the stress and stage displacement curves had yield points and the fractured specimens exhibited the slip lines at 600degC.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Date of Conference:

10-14 June 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.