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7-GHZ CMOS RF Front-End Monolithically Integrated with Inverted-F Antenna for Wireless Sensor System

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8 Author(s)
M. Ikebe ; Hokkaido University, Sapporo 060-8628, Japan. Tel: +81-11-706-7689, E-mail: ; D. Ueo ; H. Osabe ; K. Inafune
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Transmitter, receiver antennas and sensors monolithically integrated with CMOS LSIs are strongly demanded as a means of reducing the cost of wireless equipment. As the first step, an RF front- end (low-noise-amplifier [LNA] and mixer) is designed for use in the 7-GHz band corresponding to multi-band OFDM UWB group3 spectrum allocation. We clarify the design methodology of antennas on lossy Si substrates. The RF front-end with the antenna was fabricated using a 0.18-mum CMOS process. Measured conversion gain with 60-cm air interface is about -50 dB in the above band.

Published in:

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

Date of Conference:

10-14 June 2007