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High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μ m Wavelength

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4 Author(s)
Jung Ho Song ; Electron. and Telecommun. Res. Inst., Daejeon ; Kisoo Kim ; Young Ahn Leem ; Gyungock Kim

Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width at half-maximum), and a very small spectral modulation (0.7 dB) were achieved with a short length absorption region.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 19 )