Referenced Items are not available for this document.
This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise, it is shown that VCOs can be used to monitor the mm-wave noise performance of SiGe HBTs. Measurements show a 106 GHz VCO operating from 2.5 V with phase noise of -101.3 dBc/Hz at 1 MHz offset, which delivers +2.5 dBm of differential output power at 25degC, with operation verified up to 125degC. A BiCMOS VCO with a differential MOS-HBT cascode output buffer using 130 nm MOSFETs delivers +10.5 dBm of output power at 87 GHz.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:42
,
Issue:
9
)
Date of Publication: Sept. 2007
- Page(s):
- 1821 - 1833
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 9618833
- Digital Object Identifier :
- 10.1109/JSSC.2007.900769
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 August 2007
- Issue Date :
- Sept. 2007
- Sponsored by :
- IEEE Solid-State Circuits Society
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