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This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si3N4, Al2O3, Ta2O5 and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al2O3 deposited by ALD, high density of 35 nF/mm2 is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in BiCMOS technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (VCO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.