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In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron-electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead.
Device and Materials Reliability, IEEE Transactions on (Volume:7 , Issue: 2 )
Date of Publication: June 2007