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The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs

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3 Author(s)
ChloÉ Guerin ; STMicroelectron., Crolles ; Vincent Huard ; Alain Bravaix

In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron-electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:7 ,  Issue: 2 )