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First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

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5 Author(s)

The first complementary LDMOS transistors in thin SOI 65 nm low power technology is presented. The full functionality and integration are demonstrated. Complementary devices are achieved with great electrical parameters. Then a positive breakdown voltage-specific on resistance compromise has been characterized.

Published in:

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Date of Conference:

27-31 May 2007

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