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Tunable Screening of Inter-Contact Plasmons by a Recessed Gate in Field-Effect Transistor with Two-Dimensional Electron Channel

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4 Author(s)
Popov, V.V. ; Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Saratov ; Polischuk, O.V. ; Teperik, T.V. ; Shur, M.S.

This work studies field-effect transistors (FET) with two-dimensional electron channel. It is theoretically shown that the frequencies of higher-order resonances of the ungated plasmon modes can be effectively tuned by the gate-voltage variation at a short recessed gate, which mimic conventional gated plasmon resonance but with a much stronger efficiency. The calculated THz absorption spectra of a FET with a short recessed gate are presented. Results show that the frequency of the second-order inter-contact plasmon resonance can be tuned by applying the gate voltage producing the electron density variation in the short gated region of the channel.

Published in:

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on  (Volume:2 )

Date of Conference:

25-30 June 2007

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