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Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

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5 Author(s)
Reggiani, S. ; Univ. of Bologna, Bologna ; Gnani, E. ; Gnudi, A. ; Rudan, M.
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A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device- simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 9 )