Referenced Items are not available for this document.
Dual-material-gate (DMG) insulated shallow extension gate-stack MOSFET involving dielectric pocket (DP) and DMG assimilation onto the conventional MOSFET has been studied. Simulations reveal a reduction in substrate leakage current, linearity improvement, enhancement in - gm/IDS, early voltage (VEA), and gm/gd, down to 50-nm gate length as an outcome of this DP and DMG integration.
Published in:
Electron Devices, IEEE Transactions on
(Volume:54
,
Issue:
9
)
Date of Publication: Sept. 2007
- Page(s):
- 2556 - 2561
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9607962
- Digital Object Identifier :
- 10.1109/TED.2007.902855
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 August 2007
- Issue Date :
- Sept. 2007
- Sponsored by :
- IEEE Electron Devices Society
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