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Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide

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6 Author(s)

Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick SiO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 17 )