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In this paper, gain bandwidth limitations of a regularly processed 0.18 μm Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 μm Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on (Volume:1 )
Date of Conference: 13-14 July 2007