By Topic

Gain-Bandwidth Properties of 0.18μm Si-CMOS Transistor up to 10 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Siddik Yarman, B. ; Istanbul Univ, Istanbul ; Retdian, N. ; Takagi, S. ; Fujii, M.

In this paper, gain bandwidth limitations of a regularly processed 0.18 μm Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 μm Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

Published in:

Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on  (Volume:1 )

Date of Conference:

13-14 July 2007