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Gain-Bandwidth Properties of 0.18μm Si-CMOS Transistor up to 10 GHz

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4 Author(s)
Siddik Yarman, B. ; Istanbul Univ, Istanbul ; Retdian, N. ; Takagi, S. ; Fujii, M.

In this paper, gain bandwidth limitations of a regularly processed 0.18 μm Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 μm Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

Published in:
Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on  (Volume:1 )

Date of Conference: 13-14 July 2007

Page(s):
1 - 4
E-ISBN :
1-4244-0969-1
Print ISBN:
1-4244-0968-3
INSPEC Accession Number:
9832942
Conference Location :
Iasi
Digital Object Identifier :
10.1109/ISSCS.2007.4292652
Product Type:
Conference Publications

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