By Topic

Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for a CdZnTe pixelated detector array. This count-rate is more than twice the highest count-rate ever achieved using a CdZnTe detector array. Such excellent performance was demonstrated for more than 600 individual CdZnTe detector arrays. The 2-D CdZnTe monolithic arrays were 16 x 16 pixel devices with 0.4 mm times 0.4 mm area pixels on a 0.5 mm pitch and were fabricated using 8.7 mm times 8.7 mm times 3.0 mm CdZnTe single crystals grown by the high-pressure, electro-dynamic gradient freeze technique. The CdZnTe detector arrays were bonded to a ceramic substrate with the Z-bondtrade technique. This enabled performance testing of the individual detector arrays before bonding to the read-out ASIC chip. The detector arrays were characterized in a custom designed test system. The measurement and data acquisition system consisted of a 16 times 16 pin probe head and 256-channel read-out electronics controlled by a host PC. We utilized our 8-channel fast bipolar ASIC chip and computer controlled 120 kVp X-ray source. In order to measure the true throughput of the CdZnTe devices a counts correction method was developed and implemented that compensates for the counting system non-linearity caused by pile-up and amplifier shaping time effects. Survey of detector array performance as a function of CdZnTe charge transport properties showed that the maximum achievable count-rate of these detectors strongly depends on the hole charge transport properties of the crystals.

Published in:

IEEE Transactions on Nuclear Science  (Volume:54 ,  Issue: 4 )