Referenced Items are not available for this document.
Recent measurements of heavy-ion-induced charge- collection transients are presented. These measurements are possible for the first time because of recent developments in high- bandwidth, single-shot measurement technology, and exhibit several significant advantages over conventional (charge-sensitive preamplifier) charge-collection measurements. Heavy-ion induced transient measurements are presented for InGaAs/InAlAs HEMTs, AlSb/InAs HEMTs, GaAs HFETs and for SOI NMOS devices, and the significant advantages of this approach are described.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:54
,
Issue:
4
)
Date of Publication: Aug. 2007
- Page(s):
- 1010 - 1017
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 9617813
- Digital Object Identifier :
- 10.1109/TNS.2007.896345
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 August 2007
- Issue Date :
- Aug. 2007
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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