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Recent measurements of heavy-ion-induced charge- collection transients are presented. These measurements are possible for the first time because of recent developments in high- bandwidth, single-shot measurement technology, and exhibit several significant advantages over conventional (charge-sensitive preamplifier) charge-collection measurements. Heavy-ion induced transient measurements are presented for InGaAs/InAlAs HEMTs, AlSb/InAs HEMTs, GaAs HFETs and for SOI NMOS devices, and the significant advantages of this approach are described.
Date of Publication: Aug. 2007