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Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

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4 Author(s)
Giot, D. ; Central CAD & Design Solutions Group, Crolles ; Roche, P. ; Gasiot, G. ; Harboe-Sorensen, R.

SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates are discussed as a function of the LET and beam tilt. A new sensitive area devoted to MBU is computed with full 3D TCAD simulations on single and adjacent memory cells.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:54 ,  Issue: 4 )

Date of Publication:

Aug. 2007

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