By Topic

Morphology of novel XLPE cable systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hosier, I.L. ; University of Southampton, Highfield, Southampton, SO17 1BJ, UK. E-mail: ILH@ecs.soton.ac.uk ; Vaughan, A.S. ; Campus, A. ; Nilsson, U.

Crosslinked polyethylene (XLPE) insulated cables are used widely for the transmission and distribution of electrical power. Although XLPE has many desirable characteristics, the addition of other polymers constitutes one way in which properties can be modified to suit particular applications. This paper describes a modified permanganic etching technique that has been optimized to permit the study of such systems by transmission electron microscopy. The approach is then applied to a range of triple-extruded (semicon/insulation/semicon) XLPE-based cables that exhibit both one and two-phase microstructures. The morphologies seen are described and the origin of preferential lamellar growth perpendicular to the semicon/insulation interface is explored. It is also shown that the apparent presence of carbon black particles well away from the dielectric interface is an artifact associated with sample preparation.

Published in:

Solid Dielectrics, 2007. ICSD '07. IEEE International Conference on

Date of Conference:

8-13 July 2007