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A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory

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12 Author(s)
Chang, Y.W. ; Technol. Dev. Center Ltd., Hsinchu ; Wu, G.W. ; Chen, P.C. ; Chen, C.H.
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It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.

Published in:

Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE

Date of Conference:

26-30 Aug. 2007