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Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

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15 Author(s)

In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.

Published in:

Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE

Date of Conference:

26-30 Aug. 2007