Referenced Items are not available for this document.
A 1.8V 4 Mb floating-gate flash test chip utilizing back bias assisted band-to-band tunneling induced hot electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double source line architecture (DSLA) and selective verifying method (SVM), applied to NOR arrayed B4-Flash enables to achieve 100 MB/s programming speed. The MLC capability of B4-Flash memory is also shown by realizing three levels of programmed Vth distribution with 0.8V width.
Published in:
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Date of Conference: 26-30 Aug. 2007
- Page(s):
- 23 - 24
- E-ISBN :
- 1-4244-0753-2
- Print ISBN:
- 1-4244-0753-2
- INSPEC Accession Number:
- 9766309
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/NVSMW.2007.4290565
- Product Type:
- Conference Publications
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