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High Voltage Pulsed Power Supply Using IGBT Stacks

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4 Author(s)
Jong-Hyun Kim ; Korea Electrotechnol. Res. Inst. (KERI), Changwon ; Byung-Duk Min ; Shenderey, S.V. ; Geun-Hie Rim

High voltage pulsed power supply using IGBT (insulated gate bipolar transistor) stacks and pulse transformer for plasma source ion implantation is proposed. To increase voltage rating, twelve IGBTs are used in series at each IGBT stack and a step-up pulse transformer is utilized. To increase the current rating, the proposed system makes use of synchronized three pulse generator modules composed of diodes, capacitors and IGBT stacks. The proposed pulsed power supply uses semiconductor switches as main switches. Hence, the system is compact, and has semi-infinite lifetime. In addition, it has high flexibility in parameters such as voltage magnitude (10-60 kV), pulse repetition rate (PRR) (10-2000 pps), and pulse width (2-5 muS).

Published in:

Dielectrics and Electrical Insulation, IEEE Transactions on  (Volume:14 ,  Issue: 4 )