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Compact Models for the I-V Characteristics of Double Gate and Surround Gate MOSFETs

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4 Author(s)
H. Morris ; San Jose State University, San Jose, CA 95192, U.S.A. e-mail: ; E. Cumberbatch ; H. Abebe ; V. Tyree

The models presented by Lu and Taur, for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function. These solutions are shown to be accurate compared with exact numerical solutions.

Published in:

2006 16th Biennial University/Government/Industry Microelectronics Symposium

Date of Conference:

25-28 June 2006