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STARC (Semiconductor Technology Academic Research Center) is a research consortium co-founded by major Japanese semiconductor companies, whose mission is to contribute to the growth of the Japanese semiconductor industry by developing leading-edge SoC design technologies. One of the achievements enabled by the academia collaboration is HiSIM (Hiroshima University STARC IGFET Model) an advanced MOSFET Model. The HiSIM2 version includes required features in modeling for the 45 nm technology node and beyond such as the STI effect. A major development is an improved model consistency, which enables even modeling of the technology variation accurately. HiSIM2 realizes both accurate and fast circuit simulation.
Date of Conference: 21-23 June 2007