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A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-peaking is proposed for wideband input matching, broadband power gain and flat noise figure (NF) response. The proposed wideband LNA is implemented in 0.18-mum CMOS technology. Measured results show that power gain is greater than 10 dB and input return loss is below -10 dB from 2 to 11.5 GHz. The IIP3 is about +3 dBm, and the NF ranges from 3.1 to 4.1 dB over the band of interest. An excellent agreement between the simulated and measured results is found and attributed to less number of passive components needed in this circuit compared with previous designs. Besides, the ratio of figure-of- merit to chip size is as high as 190 (mW-1 /mm2 ) which is the best results among all previous reported CMOS-based wideband LNA.